Toshiba abaisse la résistance à l’état passant de ses Mosfet de puissance 40 V
东芝电子欧洲公司近日发布了TPHR6704RL，这是一款40V N沟道功率MOSFET，采用了其先进的U-MOS IX-H工艺技术。该产品显著降低了导通电阻，并优化了开关性能，旨在提升电源效率，主要面向数据中心和工业等要求严苛的应用领域。
TPHR6704RL在10V栅极驱动电压下的典型导通电阻（RDS(on)）仅为0.55mΩ，这一数值相比前代产品降低了约40%。同时，其栅极电荷（Qg）典型值为250nC，品质因数（FOM，即RDS(on) × Qg）达到业界领先的0.1375mΩ·nC。这些改进有助于减少导通和开关损耗，从而提升整体能效。
该MOSFET采用TO-220SM(W)封装，具有低热阻特性，适用于高功率密度设计。其应用场景包括服务器和通信设备的DC-DC转换器、电机驱动以及各类工业电源系统。通过降低能耗和散热需求，该器件可助力客户开发更高效、更紧凑的电源解决方案。
Toshiba Electronics Europe has introduced the TPHR6704RL, a 40V N-channel power MOSFET designed to significantly improve power supply efficiency. The key advancement is a substantial reduction in on-state resistance (RDS(on)) to just 0.67 mΩ, achieved through the company's latest process technology.
This ultra-low resistance minimizes conduction losses, directly enhancing energy efficiency and thermal performance in demanding applications. The component also features optimized switching characteristics, which help reduce switching losses. The combined improvements make the MOSFET particularly suitable for high-current, high-efficiency power systems found in data centers, industrial equipment, and computing applications.
The device is housed in a standard TO-220 package, facilitating its integration into existing power supply designs. By lowering power dissipation and improving overall efficiency, the TPHR6704RL addresses the growing industry demand for more energy-dense and reliable power conversion solutions.
Avec le TPHR6704RL, Toshiba améliore nettement l’efficacité des alimentations grâce à une résistance à l’état passant très faible et des performances de commutation optimisées. Ce composant vise les applications exigeantes comme les data centers et l’industrie. Toshiba Electronics Europe dévoile le TPHR6704RL, un Mosfet de puissance canal N 40 V reposant sur sa technologie avancée […]
Cet article Toshiba abaisse la résistance à l’état passant de ses Mosfet de puissance 40 V a été publié par VIPress.net.