Seminar Announcement: Prof. Young Keun Kim on Advanced Spin-Orbit Torque Materials for MRAM

SPINTEC will host a seminar on Friday, April 24th, featuring Prof. Young Keun Kim from the Department of Materials Science and Engineering at Korea University. The presentation, titled *"Designing High-Efficiency Spin-Orbit Torque Materials: From β-W Alloy Engineering to Low-Power MRAM Switching,"* will begin at 9:00.

Event Details:

* Location: IRIG/SPINTEC, Auditorium 445, CEA Building 10.05 (Grenoble). *Note:* On-site access requires prior entry authorization; requests must be submitted to admin.spintec@cea.fr before April 15th.

* Online Access: The seminar will be streamed via Zoom.

* Link: https://univ-grenoble-alpes-fr.zoom.us/j/98769867024?pwd=dXNnT3RMeThjYStybGVQSUN0TVdJdz09

* Meeting ID: 987 6986 7024

* Passcode: 025918

Seminar Focus: Advancing SOT-MRAM Technology

The seminar will address the critical challenge of developing spin-orbit torque (SOT) materials for next-generation spintronic devices. SOT-induced magnetization switching is a promising technology for applications like magnetic random-access memory (MRAM), logic devices, and random number generators. For practical, high-density embedded memory, these devices require materials that combine perpendicular magnetic anisotropy (PMA), high SOT efficiency for low-power writing, field-free switching capability, and compatibility with semiconductor fabrication processes—a demanding set of criteria met by very few material systems.

Prof. Kim's recent research has focused on engineering the spin-current-generating layer by alloying β-phase tungsten (β-W) with elements like Ta, N, V, Si, and Ti to enhance SOT efficiencies. The team employs first-principles energy-band calculations to identify compositional ranges promising high spin Hall conductivity, followed by the deposition and device patterning of nonmagnetic/ferromagnetic heterostructures.

Key Experimental Result:

A highlighted heterostructure of β-W-Si (4 at%)/CoFeB demonstrates several superior properties:

* Exhibits perpendicular magnetic anisotropy (PMA).

* Achieves a high damping-like SOT efficiency of approximately 0.58.

* Maintains a low longitudinal resistivity of about 135 μΩ cm.

* Withstands post-deposition heat treatment at 500°C, confirming thermal stability for backend processes.

* Most significantly, it enables an estimated write power consumption ten times lower than heterostructures based on pristine β-W and other benchmark materials.

These findings underscore the significant progress in SOT material design and its direct implications for creating more energy-efficient, high-performance MRAM.

Speaker Biography:

Prof. Young Keun Kim has been a faculty member at Korea University since 2000, following industry roles at Samsung Electro-Mechanics and Quantum Corporation. A highly decorated researcher, his honors include the Korean Government’s National Order of Service Merit (2017), all three major Korea University awards (Research, Technology, and Teaching), and prestigious awards from the Korean Magnetics Society and the Korean Institute of Metals and Materials. With over 330 peer-reviewed publications, 150 registered patents, and 150 invited talks, his research spans novel magnetic thin films and nanostructures for spintronic memory, semiconductor metallization, and sustainability/biomedical applications.

On Friday April 24th, we have the pleasure to welcome in SPINTEC Prof. Young Keun KIM from Department of Materials Science and Engineering, Korea University. He will give us a seminar at 9:00 entitled : Designing High-Efficiency Spin-Orbit Torque Materials: From β-W Alloy Engineering to Low-Power MRAM Switching

Place : IRIG/SPINTEC, auditorium 445 CEA Building 10.05 (presential access to the conference room at CEA in Grenoble requires an entry authorization. Request it before April 15th at admin.spintec@cea.fr)

video conference : https://univ-grenoble-alpes-fr.zoom.us/j/98769867024?pwd=dXNnT3RMeThjYStybGVQSUN0TVdJdz09

Meeting ID: 987 6986 7024

Passcode: 025918

Abstract : Spin-orbit torque (SOT) induced magnetization switching is a complex technology currently of great interest for various spintronic applications. It can potentially revolutionize nonvolatile embedded memory, such as magnetic random access memory (MRAM), logic devices, and true random number generators. These devices require a few nanometer-thick materials with perpendicular magnetic anisotropy (PMA) for high bit density, significant SOT efficiency to reduce writing current and energy consumption, and external field-free switching. Above all, the SOT materials must be semiconductor fabrication-friendly. However, only a few material sets and their heterostructures fulfill the requirements. In our recent research, we have faced the challenge of exploring various alloying elements, including Ta, N, V, Si, and Ti, in the β-phase W matrix as a spin-current-generating layer with enhanced SOT efficiencies. We employ first-principles energy-band calculations to narrow down the compositional ranges where we can obtain high-spin Hall conductivity values. Then, we deposit nonmagnetic/ferromagnetic heterostructures and pattern them into devices. For example, we confirm that the heterostructure consisting of β-W-Si (4 at%)/CoFeB exhibits PMA, a high damping-like SOT efficiency (~0.58), and low longitudinal resistivity (~135 μΩ cm). The heterostructures withstand 500ºC post-deposition heat treatment. Furthermore, we estimate write power consumption 10 times lower than that of the heterostructure based on pristine β-W and other materials. These findings highlight the complexity of the task and the potential for significant advances in next-generation MRAM applications.

Biography : Professor Kim has worked in the Department of Materials Science and Engineering at Korea University, Seoul, Korea, since 2000. Before joining Korea University, he worked for Samsung Electro-Mechanics in Korea and Quantum Corporation in the USA. Prof. Kim received the Korean Government’s National Order of Service Merit-Green Stripes in June 2017. He is the recipient of all three major awards at Korea University: The Research Awards in 2022 and 2021, the Technology Award in 2016, and the Teaching Award in 2005. Prof. Kim received the Kang II-Koo∙Hyundai BNG Steel Award in 2025 and the Amo Award in 2019 from the Korean Magnetics Society (KMS). He received the Iljin Academic Achievement Award from the Korean Institute of Metals and Materials (KIM) in 2015. He has published over 330 peer-reviewed journal papers, holds over 150 registered patents, and has delivered over 150 invited talks. Prof. Kim’s research interests include the development of novel magnetic thin films and nanostructured materials for spintronic memory devices, semiconductor metallization, and sustainability and biomedical applications.

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