Renesas dévoile un commutateur GaN bidirectionnel 650 V
日本瑞萨电子近日发布了一款650V双向氮化镓（GaN）开关器件TP65B110HRU，并宣称这是业界首个能够通过单一组件实现双向电流阻断的650V GaN开关。这一技术突破旨在简化功率转换系统的架构设计，并显著提升其能效表现。
该器件采用瑞萨专有的GaN技术，在单一芯片上集成了两个反向串联的GaN高电子迁移率晶体管（HEMT），从而实现了双向阻断能力。这种设计消除了传统方案中所需的多个分立器件和复杂驱动电路，有助于减少系统体积、降低物料成本并提高可靠性。
TP65B110HRU适用于需要双向功率流的应用场景，例如车载充电器（OBC）、储能系统（ESS）、数据中心电源以及可再生能源转换装置。其650V的额定电压使其能够应对严苛的工业与汽车环境。瑞萨表示，该器件在提升功率密度的同时，还能降低开关损耗，从而优化整体系统效率。
这一产品的推出，反映了功率半导体行业向宽禁带材料（如GaN）加速演进，并致力于解决高效、紧凑型能源转换方案的需求。瑞萨此举有望在电动汽车和工业电源等高增长市场进一步巩固其技术地位。
Renesas Electronics has unveiled what it claims is the industry's first 650 V bidirectional gallium nitride (GaN) switch capable of blocking current in both directions using a single component. The new TP65B110HRU device is designed to simplify power conversion architectures and significantly improve system efficiency.
This innovation addresses a key challenge in applications like server power supplies, energy storage systems, and onboard chargers for electric vehicles, where bidirectional power flow is essential. Traditionally, achieving bidirectional blocking required multiple discrete components or complex circuit designs, increasing size, cost, and losses.
The TP65B110HRU integrates Renesas's proprietary GaN technology to enable efficient switching in both directions with a single chip. The company states this reduces component count, board space, and conduction losses compared to conventional silicon-based or multi-device solutions. Key specifications include a 650 V blocking voltage and optimized performance for high-frequency switching, which contributes to higher power density and improved thermal management.
By consolidating functionality, the switch allows designers to create more compact and efficient power systems. Renesas highlights potential applications in AC-DC and DC-DC converters, where the component can streamline topologies like totem-pole PFC (Power Factor Correction) circuits. The launch strengthens Renesas's portfolio in high-performance power semiconductors, positioning it competitively in the growing market for GaN solutions aimed at next-generation energy-efficient electronics.
Le Japonais lance ce qu’il considère comme le premier commutateur GaN 650 V capable de bloquer les courants dans les deux sens avec un seul composant. Cette innovation simplifie les architectures et améliore fortement le rendement des systèmes de conversion de puissance. Renesas Electronics annonce le lancement du TP65B110HRU, premier commutateur bidirectionnel de classe 650 […]
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