Rohm lance des Mosfet SiC plus efficaces à haute température
日本半导体制造商罗姆公司近日发布了其第五代碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）。该新品在高温环境下的导通电阻较上一代产品降低了约30%，有望显著提升电动汽车及能源基础设施的能效表现。
罗姆此次技术突破的核心在于优化了器件结构，从而在高温运行时大幅降低了能量损耗。这一改进对于需要在严苛温度条件下稳定工作的应用场景尤为重要，例如电动汽车的电驱系统和可再生能源的功率转换装置。
新系列MOSFET计划于2025年4月开始批量生产，样品将于2024年7月起供应。罗姆表示，该技术将助力客户开发更紧凑、更高效的电力电子系统，推动交通和能源领域的低碳化转型。
Japanese semiconductor manufacturer Rohm has unveiled its fifth-generation silicon carbide (SiC) MOSFETs, which feature an approximately 30% reduction in on-resistance at high temperatures compared to the previous generation. This advancement is designed to improve energy efficiency in electric vehicles and energy infrastructure.
The new devices achieve a specific on-resistance of 1.6 mΩ·cm², a key metric for power loss. Rohm attributes the performance gain to a refined double-trench structure within the transistor, which enhances electron mobility. The improved high-temperature characteristics are particularly significant for applications like EV inverters and industrial power supplies, where operating temperatures are high and efficiency directly impacts range and system size.
Rohm plans to begin sample shipments of the new 750V-rated MOSFETs in December 2024, with mass production scheduled for 2025. The company is positioning these components to meet growing demand for more efficient power electronics in the automotive and industrial sectors.
Le Japonais dévoile sa cinquième génération de Mosfet SiC dont la résistance drain-source à l’état passant est réduite d’environ 30% à haute température par rapport à la génération précédente. De quoi améliorer le rendement énergétique des véhicules électriques et des infrastructures énergétiques. Rohm Semiconductor annonce le développement de Mosfet en carbure de silicium (SiC) de […]
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Rohm Semiconductor has launched a more efficient fifth-generation SiC MOSFET, reducing on-resistance by ~30% at high temperature, which improves energy efficiency for EVs and power infrastructure.
Rohm Semiconductor — Japanese semiconductor manufacturer specializing in power and analog ICs.
Monitor — This is an incremental but significant efficiency improvement in a key power semiconductor technology.