Lam Research and CEA-Leti Expand R&D Collaboration to Advance Specialty Technology Manufacturing

Lam Research Corp. and French research institute CEA-Leti have entered a new multi-year agreement to accelerate the development of next-generation specialty semiconductor devices. Announced on February 2, 2026, the collaboration will focus on pathfinding for new materials and fabrication processes aimed at creating more energy-efficient devices.

The partnership targets several key technology areas: micro-electromechanical systems (MEMS), 3D imaging and sensors, power management, radio frequency (RF) solutions, photonics (including MicroLED displays), and optical interconnects. A core objective is exploring novel multi-elemental materials and processes for higher-efficiency compound semiconductors. By leveraging CEA-Leti's expertise, Lam aims to rapidly identify and overcome critical materials and engineering challenges, accelerating the optimization of new fabrication solutions for future AI and high-performance computing applications.

This agreement builds on a history of successful co-development, including recent work on pulsed plasma technologies. The new joint research will specifically investigate advanced materials and thin films for lower-power, high-performance applications, targeting next-generation RF filters, electro-optic modulation, and quantum optics.

Lam's etch and deposition technologies, notably its Lam Prestis™ pulsed laser deposition (PLD) system, will be central to the research. The collaboration will also utilize CEA-Leti's extensive capabilities in materials analysis, surface science, and device characterization to better understand how process developments affect material properties and ultimate device performance.

Communiqué de presse|Actualité|Nouvelles technologies

​​​​​New Multi-Year Agreement Will Focus on Accelerating Pathfinding of New Materials andProcesses for the Manufacturing of More Energy-Efficient Specialty Devices

​FREMONT, Calif., and GRENOBLE, France, February 2, 2026–Lam Research Corp.(Nasdaq: LRCX), a leader in semiconductor fabrication equipment and services andCEA-Leti, a research institute pioneering micro- and nanotechnologies, today announced a new multi-year agreement to advance the development of next-generation Specialty Technology devices, including micro-electromechanical systems (MEMS), 3D imaging and sensors, power management and radio frequency (RF) solutions, photonics (including MicroLED display applications), and optical interconnect technologies.

Under the agreement, Lam and CEA-Leti will explore novel multi-elemental materials and pathfinding for future fabrication processes of higher-efficiency compound semiconductors. By working with CEA-Leti, Lam strives to more quickly identify and overcome critical materials and engineering challenges, and accelerate the optimization of new fabrication solutions for future generations of Specialty Technology devices for AI and high-performance computing.​

Building on a long history of successful co-development projects, including recent work on pulsed plasma technologies, the new joint research with CEA-Leti will focus on exploring a range of new, novel materials and films for lower-power, high-performance specialty technology applications and devices. These are intended solutions for next-generation RF filters, electro-optic modulation, and quantum optics.

Lam's innovative etch and deposition technologies, including the company's breakthrough pulsed laser deposition (PLD) system,Lam Prestis™, will be integral to the research. By accessing CEA-Leti's extensive materials analysis, surface science, and device characterization and measurement capabilities, Lam aspires to better understand the impact of process developments on materials properties and device performance.